IR2131PBF

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Infineon Technologies

HALF BRIDGE BASED MOSFET DRIVER,

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IR2131PBF

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Infineon Technologies

HALF BRIDGE BASED MOSFET DRIVER,

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2131PBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	500 mA
Current - Peak Output (Source, Sink) [custom]	250 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Inverting
Logic Voltage - VIL, VIH [custom]	2.2 V
Logic Voltage - VIL, VIH [custom]	0.8 V
Mounting Type	Through Hole
Number of Drivers	6
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	28-DIP
Package / Case	0.6 in
Package / Case	15.24 mm
Rise / Fall Time (Typ) [custom]	80 ns
Rise / Fall Time (Typ) [custom]	40 ns
Supplier Device Package	28-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2131 Series

Part	Gate Type	Input Type	Driven Configuration	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Number of Drivers	Channel Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Package / Case [x]	Package / Case [y]	Mounting Type	Supplier Device Package	High Side Voltage - Max (Bootstrap) [Max]	Voltage - Supply [Max]	Voltage - Supply [Min]	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Package / Case
Infineon Technologies IR2131SPBF	IGBT N-Channel MOSFET	Inverting	Half-Bridge	80 ns	40 ns	6	Independent	150 °C	-40 °C	28-SOIC	0.295 in	7.5 mm	Surface Mount	28-SOIC	600 V	20 V	10 VDC	2.2 V	0.8 V	500 mA	250 mA
Infineon Technologies IR2131PBF	IGBT N-Channel MOSFET	Inverting	Half-Bridge	80 ns	40 ns	6	Independent	150 °C	-40 °C	28-DIP			Through Hole	28-PDIP	600 V	20 V	10 VDC	2.2 V	0.8 V	500 mA	250 mA	0.6 in	15.24 mm
Infineon Technologies IR2131SPBF	IGBT N-Channel MOSFET	Inverting	Half-Bridge	80 ns	40 ns	6	Independent	150 °C	-40 °C	28-SOIC	0.295 in	7.5 mm	Surface Mount	28-SOIC	600 V	20 V	10 VDC	2.2 V	0.8 V	500 mA	250 mA
Infineon Technologies IR2131JPBF	IGBT N-Channel MOSFET	Inverting	Half-Bridge	80 ns	40 ns	6	Independent	150 °C	-40 °C	44-LCC (J-Lead)			Surface Mount	44-PLCC 32 Leads (16.58x16.58)	600 V	20 V	10 VDC	2.2 V	0.8 V	500 mA	250 mA	32 Leads
Infineon Technologies IR2131STRPBF	IGBT N-Channel MOSFET	Inverting	Half-Bridge	80 ns	40 ns	6	Independent	150 °C	-40 °C	28-SOIC	0.295 in	7.5 mm	Surface Mount	28-SOIC	600 V	20 V	10 VDC	2.2 V	0.8 V	500 mA	250 mA
Infineon Technologies IR2131PBF	IGBT MOSFET	Inverting	Half-Bridge	80 ns	40 ns	6	Independent	150 °C	-40 °C	28-DIP			Through Hole	28-PDIP	600 V	20 V	10 VDC	2.2 V	0.8 V	500 mA	250 mA	0.6 in	15.24 mm
Infineon Technologies IR2131JTR	IGBT N-Channel MOSFET	Inverting	Half-Bridge	80 ns	40 ns	6	Independent	150 °C	-40 °C	44-LCC (J-Lead)			Surface Mount	44-PLCC 32 Leads (16.58x16.58)	600 V	20 V	10 VDC	2.2 V	0.8 V	500 mA	250 mA	32 Leads
Infineon Technologies IR2131	IGBT N-Channel MOSFET	Inverting	Half-Bridge	80 ns	40 ns	6	Independent	150 °C	-40 °C	28-DIP			Through Hole	28-PDIP	600 V	20 V	10 VDC	2.2 V	0.8 V	500 mA	250 mA	0.6 in	15.24 mm
Infineon Technologies IR2131S	IGBT N-Channel MOSFET	Inverting	Half-Bridge	80 ns	40 ns	6	Independent	150 °C	-40 °C	28-SOIC	0.295 in	7.5 mm	Surface Mount	28-SOIC	600 V	20 V	10 VDC	2.2 V	0.8 V	500 mA	250 mA
Infineon Technologies IR2131JTRPBF	IGBT N-Channel MOSFET	Inverting	Half-Bridge	80 ns	40 ns	6	Independent	150 °C	-40 °C	44-LCC (J-Lead)			Surface Mount	44-PLCC 32 Leads (16.58x16.58)	600 V	20 V	10 VDC	2.2 V	0.8 V	500 mA	250 mA	32 Leads

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	74	$ 4.06
		74	$ 4.06

Description

General part information

IR2131 Series

Half-Bridge Gate Driver IC Inverting 28-PDIP

Documents

Technical documentation and resources

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