IR2131 Series

Catalog

IC GATE DRVR HALF-BRIDGE 28SOIC

Part	Gate Type	Input Type	Driven Configuration	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Number of Drivers	Channel Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Package / Case [x]	Package / Case [y]	Mounting Type	Supplier Device Package	High Side Voltage - Max (Bootstrap) [Max]	Voltage - Supply [Max]	Voltage - Supply [Min]	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Package / Case
Infineon Technologies IR2131SPBF	IGBT N-Channel MOSFET	Inverting	Half-Bridge	80 ns	40 ns	6	Independent	150 °C	-40 °C	28-SOIC	0.295 in	7.5 mm	Surface Mount	28-SOIC	600 V	20 V	10 VDC	2.2 V	0.8 V	500 mA	250 mA
Infineon Technologies IR2131PBF	IGBT N-Channel MOSFET	Inverting	Half-Bridge	80 ns	40 ns	6	Independent	150 °C	-40 °C	28-DIP			Through Hole	28-PDIP	600 V	20 V	10 VDC	2.2 V	0.8 V	500 mA	250 mA	0.6 in	15.24 mm
Infineon Technologies IR2131SPBF	IGBT N-Channel MOSFET	Inverting	Half-Bridge	80 ns	40 ns	6	Independent	150 °C	-40 °C	28-SOIC	0.295 in	7.5 mm	Surface Mount	28-SOIC	600 V	20 V	10 VDC	2.2 V	0.8 V	500 mA	250 mA
Infineon Technologies IR2131JPBF	IGBT N-Channel MOSFET	Inverting	Half-Bridge	80 ns	40 ns	6	Independent	150 °C	-40 °C	44-LCC (J-Lead)			Surface Mount	44-PLCC 32 Leads (16.58x16.58)	600 V	20 V	10 VDC	2.2 V	0.8 V	500 mA	250 mA	32 Leads
Infineon Technologies IR2131STRPBF	IGBT N-Channel MOSFET	Inverting	Half-Bridge	80 ns	40 ns	6	Independent	150 °C	-40 °C	28-SOIC	0.295 in	7.5 mm	Surface Mount	28-SOIC	600 V	20 V	10 VDC	2.2 V	0.8 V	500 mA	250 mA
Infineon Technologies IR2131PBF	IGBT MOSFET	Inverting	Half-Bridge	80 ns	40 ns	6	Independent	150 °C	-40 °C	28-DIP			Through Hole	28-PDIP	600 V	20 V	10 VDC	2.2 V	0.8 V	500 mA	250 mA	0.6 in	15.24 mm
Infineon Technologies IR2131JTR	IGBT N-Channel MOSFET	Inverting	Half-Bridge	80 ns	40 ns	6	Independent	150 °C	-40 °C	44-LCC (J-Lead)			Surface Mount	44-PLCC 32 Leads (16.58x16.58)	600 V	20 V	10 VDC	2.2 V	0.8 V	500 mA	250 mA	32 Leads
Infineon Technologies IR2131	IGBT N-Channel MOSFET	Inverting	Half-Bridge	80 ns	40 ns	6	Independent	150 °C	-40 °C	28-DIP			Through Hole	28-PDIP	600 V	20 V	10 VDC	2.2 V	0.8 V	500 mA	250 mA	0.6 in	15.24 mm
Infineon Technologies IR2131S	IGBT N-Channel MOSFET	Inverting	Half-Bridge	80 ns	40 ns	6	Independent	150 °C	-40 °C	28-SOIC	0.295 in	7.5 mm	Surface Mount	28-SOIC	600 V	20 V	10 VDC	2.2 V	0.8 V	500 mA	250 mA
Infineon Technologies IR2131JTRPBF	IGBT N-Channel MOSFET	Inverting	Half-Bridge	80 ns	40 ns	6	Independent	150 °C	-40 °C	44-LCC (J-Lead)			Surface Mount	44-PLCC 32 Leads (16.58x16.58)	600 V	20 V	10 VDC	2.2 V	0.8 V	500 mA	250 mA	32 Leads