AOTF600A70L

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 8.5A TO220F

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 8.5A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	AOTF600A70L

Current - Continuous Drain (Id) @ 25°C	8.5 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15.5 nC
Input Capacitance (Ciss) (Max) @ Vds	870 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	27 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]
Alpha & Omega Semiconductor Inc. AOTF600A70FL	26 W	900 pF	8.5 A	4 V	-55 °C	150 °C	TO-220F	MOSFET (Metal Oxide)	TO-220-3 Full Pack	10 V	20 V	Through Hole	600 mOhm	N-Channel	700 V	14.5 nC
Alpha & Omega Semiconductor Inc. AOTF600A70L	27 W		8.5 A	3.5 V	-55 °C	150 °C	TO-220F	MOSFET (Metal Oxide)	TO-220-3 Full Pack	10 V	20 V	Through Hole	600 mOhm	N-Channel	700 V	15.5 nC	870 pF
Alpha & Omega Semiconductor Inc. AOTF600A60L			8 A	3.5 V	-55 °C	150 °C	TO-220F	MOSFET (Metal Oxide)	TO-220-3 Full Pack	10 V	20 V	Through Hole	600 mOhm	N-Channel	600 V	11.5 nC	608 pF	27.5 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 700 V 8.5A (Tj) 27W (Tc) Through Hole TO-220F

Technical documentation and resources