MOSFET N-CH 700V 8.5A TO220F
| Part | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Technology | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Rds On (Max) @ Id, Vgs | FET Type | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 26 W | 900 pF | 8.5 A | 4 V | -55 °C | 150 °C | TO-220F | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 10 V | 20 V | Through Hole | 600 mOhm | N-Channel | 700 V | 14.5 nC | ||
Alpha & Omega Semiconductor Inc. | 27 W | 8.5 A | 3.5 V | -55 °C | 150 °C | TO-220F | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 10 V | 20 V | Through Hole | 600 mOhm | N-Channel | 700 V | 15.5 nC | 870 pF | ||
Alpha & Omega Semiconductor Inc. | 8 A | 3.5 V | -55 °C | 150 °C | TO-220F | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 10 V | 20 V | Through Hole | 600 mOhm | N-Channel | 600 V | 11.5 nC | 608 pF | 27.5 W |