BYC30WT-600PQ

Active

WeEn Semiconductors

DIODE GEN PURP 600V 30A TO247-3

Deep-Dive with AI

Search across all available documentation for this part.

BYC30WT-600PQ

Active

WeEn Semiconductors

DIODE GEN PURP 600V 30A TO247-3

Deep-Dive with AI

Specifications Pricing Series Description Documents

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.73
		30	$ 1.39
		120	$ 1.14
		510	$ 1.03

Description

General part information

BYC30 Series

Diode 600 V 30A Through Hole TO-247-3

Documents

Technical documentation and resources

No documents available

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	BYC30WT-600PQ	BYC30 Series

Current - Average Rectified (Io)	30 A	30 A
Current - Reverse Leakage @ Vr	10 µA	10 - 250 µA
Mounting Type	Through Hole	Through Hole, Surface Mount
Operating Temperature - Junction	-	175 °C
Operating Temperature - Junction [Max]	175 °C	175 °C
Package / Case	TO-247-3	TO-247-2, TO-247-3, TO-220-2, TO-3PFM, SC-93-3, D2PAK (2 Leads + Tab), TO-263AB, TO-263-3, TO-220-2 Full Pack, Isolated Tab
Reverse Recovery Time (trr)	22 ns	22 - 65 ns
Speed	200 mA, 500 ns	200 - 500 mA
Supplier Device Package	TO-247-3	TO-247-2, TO-247-3, TO-220AC, TO-3PF, D2PAK, TO-220FP, IITO-220-2L
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V	1.2 - 600 kV
Voltage - Forward (Vf) (Max) @ If	2.75 V	1.8 - 3.3 V

BYC30 Series

DIODE GEN PURP 1.2KV 30A TO247-2

Part	Reverse Recovery Time (trr)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Technology	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Speed	Mounting Type	Operating Temperature - Junction
WeEn Semiconductors BYC30W-1200PQ	65 ns	TO-247-2	1.2 kV	3.3 V	TO-247-2	Standard	30 A	250 µA	175 °C	200 mA, 500 ns	Through Hole
WeEn Semiconductors BYC30WT-600PQ	22 ns	TO-247-3	600 V	2.75 V	TO-247-3	Standard	30 A	10 µA	175 °C	200 mA, 500 ns	Through Hole
WeEn Semiconductors BYC30W-600PT2Q	34 ns	TO-247-2	600 V	2.75 V	TO-247-2	Standard	30 A	10 µA	175 °C	200 mA, 500 ns	Through Hole
WeEn Semiconductors BYC30W-600PQ	22 ns	TO-247-2	600 V	2.75 V	TO-247-2	Standard	30 A	10 µA	175 °C	200 mA, 500 ns	Through Hole
WeEn Semiconductors BYC30-600P,127	35 ns	TO-220-2	600 V	1.8 V	TO-220AC	Standard	30 A	10 µA	175 °C	200 mA, 500 ns	Through Hole
WeEn Semiconductors BYC30JT-600PSQ	22 ns	SC-93-3, TO-3PFM	600 V	2.75 V	TO-3PF	Standard	30 A	10 µA		200 mA, 500 ns	Through Hole	175 °C
WeEn Semiconductors BYC30B-600PJ	35 ns	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	600 V	2.75 V	D2PAK	Standard	30 A	10 µA	175 °C	200 mA, 500 ns	Surface Mount
WeEn Semiconductors BYC30X-600P,127	35 ns	TO-220-2 Full Pack, Isolated Tab	600 V	1.8 V	TO-220FP	Standard	30 A	10 µA	175 °C	200 mA, 500 ns	Through Hole
WeEn Semiconductors BYC30-1200PQ	65 ns	TO-220-2	1.2 kV	3.3 V	TO-220AC	Standard	30 A	250 µA	175 °C	200 mA, 500 ns	Through Hole
WeEn Semiconductors BYC30WT-600PSQ	35 ns	TO-247-3	600 V	2.75 V	TO-247-3	Standard	30 A	10 µA		200 mA, 500 ns	Through Hole	175 °C