BYC30 Series

Catalog

DIODE GEN PURP 600V 30A TO247-3

Part	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Supplier Device Package	Operating Temperature - Junction [Max]	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If	Speed	Mounting Type	Operating Temperature - Junction
WeEn Semiconductors BYC30WT-600PQ	30 A	10 µA	TO-247-3	175 °C	22 ns	600 V	Standard	TO-247-3	2.75 V	200 mA, 500 ns	Through Hole
WeEn Semiconductors BYC30W-600PT2Q	30 A	10 µA	TO-247-2	175 °C	34 ns	600 V	Standard	TO-247-2	2.75 V	200 mA, 500 ns	Through Hole
WeEn Semiconductors BYC30W-600PQ	30 A	10 µA	TO-247-2	175 °C	22 ns	600 V	Standard	TO-247-2	2.75 V	200 mA, 500 ns	Through Hole
WeEn Semiconductors BYC30-600P,127	30 A	10 µA	TO-220AC	175 °C	35 ns	600 V	Standard	TO-220-2	1.8 V	200 mA, 500 ns	Through Hole
WeEn Semiconductors BYC30JT-600PSQ	30 A	10 µA	TO-3PF		22 ns	600 V	Standard	SC-93-3, TO-3PFM	2.75 V	200 mA, 500 ns	Through Hole	175 °C
WeEn Semiconductors BYC30B-600PJ	30 A	10 µA	D2PAK	175 °C	35 ns	600 V	Standard	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	2.75 V	200 mA, 500 ns	Surface Mount
WeEn Semiconductors BYC30-1200PQ	30 A	250 µA	TO-220AC	175 °C	65 ns	1.2 kV	Standard	TO-220-2	3.3 V	200 mA, 500 ns	Through Hole
WeEn Semiconductors BYC30WT-600PSQ	30 A	10 µA	TO-247-3		35 ns	600 V	Standard	TO-247-3	2.75 V	200 mA, 500 ns	Through Hole	175 °C
WeEn Semiconductors BYC30Y-600PQ	30 A	10 µA	IITO-220-2L		35 ns	600 V	Standard	TO-220-2	2.75 V	200 mA, 500 ns	Through Hole	175 °C
WeEn Semiconductors BYC30DW-600PQ	30 A	10 µA	TO-247-2	175 °C	33 ns	600 V	Standard	TO-247-2	3.3 V	200 mA, 500 ns	Through Hole