TSM3457CX6 RFG

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Taiwan Semiconductor Corporation

MOSFET P-CHANNEL 30V 5A SOT26

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Taiwan Semiconductor Corporation

MOSFET P-CHANNEL 30V 5A SOT26

Technical Specifications

Parameters and characteristics for this part

Specification	TSM3457CX6 RFG

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Input Capacitance (Ciss) (Max) @ Vds	551.57 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	SOT-26
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]
Taiwan Semiconductor Corporation TSM3457CX6 RFG	2 W	4.5 V 10 V	MOSFET (Metal Oxide)	P-Channel	3 V	30 V	60 mOhm	SOT-23-6	SOT-26	5 A	Surface Mount	20 V	551.57 pF	27 nC	-55 °C	150 °C

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General part information

P-Channel 30 V 5A (Ta) 2W (Ta) Surface Mount SOT-26

Technical documentation and resources

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