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MOSFET P-CHANNEL 30V 5A SOT26
| Part | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Technology | FET Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Package / Case | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 2 W | 4.5 V 10 V | MOSFET (Metal Oxide) | P-Channel | 3 V | 30 V | 60 mOhm | SOT-23-6 | SOT-26 | 5 A | Surface Mount | 20 V | 551.57 pF | 27 nC | -55 °C | 150 °C |