STY100NM60N
LTBN-CHANNEL 600 V, 0.025 OHM TYP., 98 A, MDMESH(TM) II POWER MOSFET IN MAX247 PACKAGE
STY100NM60N
LTBN-CHANNEL 600 V, 0.025 OHM TYP., 98 A, MDMESH(TM) II POWER MOSFET IN MAX247 PACKAGE
Description
General part information
STY100 Series
This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.100% avalanche testedLow input capacitance and gate chargeLow gate input resistance
Technical Specifications
Parameters and characteristics for this part
| Specification | STY100NM60N |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 98 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 330 nC |
| Input Capacitance (Ciss) (Max) | 9600 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | MAX247™ |
| Power Dissipation (Max) | 625 W |
| Rds On (Max) | 29 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
