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STY100NM60N - TO-247-3

STY100NM60N

Active
STMicroelectronics

N-CHANNEL 600 V, 0.025 OHM TYP., 98 A, MDMESH(TM) II POWER MOSFET IN MAX247 PACKAGE

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DocumentsDatasheet+19
STY100NM60N - TO-247-3

STY100NM60N

Active
STMicroelectronics

N-CHANNEL 600 V, 0.025 OHM TYP., 98 A, MDMESH(TM) II POWER MOSFET IN MAX247 PACKAGE

Deep-Dive with AI

DocumentsDatasheet+19

Technical Specifications

Parameters and characteristics for this part

SpecificationSTY100NM60N
Current - Continuous Drain (Id) @ 25°C98 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs330 nC
Input Capacitance (Ciss) (Max) @ Vds9600 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)625 W
Rds On (Max) @ Id, Vgs29 mOhm
Supplier Device PackageMAX247™
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 26.77
30$ 22.20
120$ 20.81
510$ 17.76
NewarkEach 1$ 22.47

Description

General part information

STY100NM60N Series

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.