STY100NS20FD

Obsolete

STMicroelectronics

MOSFET N-CH 200V 100A MAX247

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STY100NS20FD

Obsolete

STMicroelectronics

MOSFET N-CH 200V 100A MAX247

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STY100NS20FD

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	360 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7900 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	450 W
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	MAX247™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

STY100NM60N Series

N-channel 600 V, 0.025 Ohm typ., 98 A, MDmesh(TM) II Power MOSFET in Max247 package

Part	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Supplier Device Package	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max) [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Operating Temperature
STMicroelectronics STY100NM60N	MOSFET (Metal Oxide)	4 V	600 V	29 mOhm	330 nC	10 V	625 W	MAX247™	N-Channel	TO-247-3	98 A	-55 °C	150 °C	25 V	Through Hole	9600 pF
STMicroelectronics STY100NS20FD	MOSFET (Metal Oxide)	4 V	200 V	24 mOhm	360 nC	10 V	450 W	MAX247™	N-Channel	TO-247-3	100 A				Through Hole		7900 pF	20 V	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STY100NM60N Series

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Documents

Technical documentation and resources