TQM043NH04LCR RLG

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Taiwan Semiconductor Corporation

TRANS MOSFET N-CH SI 40V 113A 8-PIN PDFN-U EP T/R AUTOMOTIVE AEC-Q101

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Active

Taiwan Semiconductor Corporation

TRANS MOSFET N-CH SI 40V 113A 8-PIN PDFN-U EP T/R AUTOMOTIVE AEC-Q101

Technical Specifications

Parameters and characteristics for this part

Specification	TQM043NH04LCR RLG

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2480 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	100 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.3 mOhm
Supplier Device Package	8-PDFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	FET Type	Qualification	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id [Max]	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Supplier Device Package	Technology	Grade
Taiwan Semiconductor Corporation TQM043NH04CR RLG
Taiwan Semiconductor Corporation TQM043NH04LCR RLG	N-Channel	AEC-Q101	100 W	-55 °C	175 ░C	4.3 mOhm	42 nC	2.2 V	16 V	Surface Mount	4.5 V 10 V	40 V	2480 pF	8-PowerTDFN	8-PDFN (5x6)	MOSFET (Metal Oxide)	Automotive

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General part information

N-Channel 40 V 20A (Ta), 54A (Tc) 100W (Tc) Surface Mount 8-PDFN (5x6)

Technical documentation and resources