MSC020SDA120B

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Microchip Technology

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 20 A, 91 NC, TO-247

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MSC020SDA120B

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Microchip Technology

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 20 A, 91 NC, TO-247

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Description Specifications Series Pricing CAD Documents

Description

General part information

MSC020SDA120 Series

MSC020SDA120 is part of our newest family of SiC Schottky Barrier Diode (SBD) devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.

Technical Specifications

Parameters and characteristics for this part

Specification	MSC020SDA120B

Capacitance	1130 pF
Current - Average Rectified (Io)	49 A
Current - Reverse Leakage	200 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	TO-247-2
Package Name	TO-247
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Voltage - Forward (Vf) (Max)	1.8 V

MSC020SDA120 Series

Part	Package Name	Voltage - DC Reverse (Vr) (Max)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Technology	Current - Reverse Leakage	Current - Average Rectified (Io)	Package / Case	Capacitance	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max)	Mounting Type
Microchip Technology MSC020SDA120B	TO-247	1200 V	500 mA	No Recovery Time	500 mA 500 mA	175 °C	-55 °C	SiC (Silicon Carbide) Schottky	200 µA	49 A	TO-247-2	1130 pF	0 ns	1.8 V	Through Hole
Microchip Technology MSC020SDA120D/S
Microchip Technology MSC020SDA120S	D3PAK	1200 V	500 mA	No Recovery Time	500 mA 500 mA	175 °C	-55 °C	SiC (Silicon Carbide) Schottky	200 µA	49 A	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	1130 pF	0 ns	1.8 V	Surface Mount
Microchip Technology MSC020SDA120K	TO-220-2	1200 V	500 mA	No Recovery Time	500 mA 500 mA	175 °C	-55 °C	SiC (Silicon Carbide) Schottky	200 µA	49 A	TO-220-2	1130 pF	0 ns	1.8 V	Through Hole