
MSC020SDA120 Series
Manufacturer: Microchip Technology
SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 20 A, 91 NC, TO-247
| Part | Package Name | Voltage - DC Reverse (Vr) (Max) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Technology | Current - Reverse Leakage | Current - Average Rectified (Io) | Package / Case | Capacitance | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | TO-247 | 1200 V | 500 mA | No Recovery Time | 500 mA 500 mA | 175 °C | -55 °C | SiC (Silicon Carbide) Schottky | 200 µA | 49 A | TO-247-2 | 1130 pF | 0 ns | 1.8 V | Through Hole |
Microchip Technology | |||||||||||||||
Microchip Technology | D3PAK | 1200 V | 500 mA | No Recovery Time | 500 mA 500 mA | 175 °C | -55 °C | SiC (Silicon Carbide) Schottky | 200 µA | 49 A | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 1130 pF | 0 ns | 1.8 V | Surface Mount |
Microchip Technology | TO-220-2 | 1200 V | 500 mA | No Recovery Time | 500 mA 500 mA | 175 °C | -55 °C | SiC (Silicon Carbide) Schottky | 200 µA | 49 A | TO-220-2 | 1130 pF | 0 ns | 1.8 V | Through Hole |