DMP2012SN-7

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMP2012SN-7

Current - Continuous Drain (Id) @ 25°C	900 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	178.5 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	SC-59-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

P-Channel Enhancement Mode MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
Diodes Inc DMP2012SN-7	-55 °C	150 °C	1.2 V	500 mW	2.5 V 4.5 V	SC-59 SOT-23-3 TO-236-3	SC-59-3	12 V	Surface Mount	178.5 pF	MOSFET (Metal Oxide)	20 V	P-Channel	900 mA	300 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly