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P-Channel Enhancement Mode MOSFET
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Supplier Device Package | Vgs (Max) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Technology | Drain to Source Voltage (Vdss) | FET Type | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | -55 °C | 150 °C | 1.2 V | 500 mW | 2.5 V 4.5 V | SC-59 SOT-23-3 TO-236-3 | SC-59-3 | 12 V | Surface Mount | 178.5 pF | MOSFET (Metal Oxide) | 20 V | P-Channel | 900 mA | 300 mOhm |