Specification	IPW65R080CFDFKSA1

Current - Continuous Drain (Id) (Tc)	43.3 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	170 nC
Input Capacitance (Ciss) (Max)	5030 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	PG-TO247-3-1
Power Dissipation (Max)	391 W
Rds On (Max)	80 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

IPW65R080 Series

Part	Rds On (Max)	Power Dissipation (Max)	Gate Charge (Max)	Qualification	FET Type	Mounting Type	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Grade	Input Capacitance (Ciss) (Max)	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package Name	Technology
INFINEON IPW65R080CFDAFKSA1	80 mOhm	391 W	161 nC	AEC-Q101	N-Channel	Through Hole	4.5 V	-40 °C	150 °C	Automotive	4440 pF	20 V	TO-247-3	43.3 A	10 V	650 V	PG-TO247-3	MOSFET (Metal Oxide)
INFINEON IPW65R080CFDFKSA2	80 mOhm	391 W	167 nC 167 nC		N-Channel	Through Hole	4.5 V	-55 °C	150 °C		5030 pF	20 V	TO-247-3	43.3 A	10 V	650 V	PG-TO247-3	MOSFET (Metal Oxide)
INFINEON IPW65R080CFDFKSA1	80 mOhm	391 W	170 nC		N-Channel	Through Hole	4.5 V	-55 °C	150 °C		5030 pF	20 V	TO-247-3	43.3 A	10 V	700 V	PG-TO247-3-1	MOSFET (Metal Oxide)

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