Description
General part information
IPW65R080 Series
Replacement for650V CoolMOS™ CFD2is600V CoolMOS™ CFD7 650V CoolMOS™ CFD2is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPW65R080CFDFKSA2 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 43.3 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 167 nC, 167 nC |
| Input Capacitance (Ciss) (Max) | 5030 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | PG-TO247-3 |
| Power Dissipation (Max) | 391 W |
| Rds On (Max) | 80 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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CAD
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