IR2132JPBF

NRND

Infineon Technologies

EICEDRIVER™ 600 V THREE PHASE DRIVER IC WITH TYPICAL 0.25 A SOURCE AND 0.5 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT PLCC44 PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: FAULT REPORTING, OPERATIONAL AMPLIFIER, OVER-CURRENT PROTECTION (ITRIP), SEPARATE PIN FOR LOGIC GROUND, SHOOT THROUGH PROTECTION

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IR2132JPBF

NRND

Infineon Technologies

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2132JPBF

Channel Type	3-Phase
Current - Peak Output (Source, Sink) [custom]	500 mA
Current - Peak Output (Source, Sink) [custom]	250 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Inverting
Logic Voltage - VIL, VIH [custom]	2.2 V
Logic Voltage - VIL, VIH [custom]	0.8 V
Mounting Type	Surface Mount
Number of Drivers	6
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	32 Leads
Package / Case	44-LCC (J-Lead)
Rise / Fall Time (Typ) [custom]	80 ns
Rise / Fall Time (Typ) [custom]	35 ns
Supplier Device Package	44-PLCC, 32 Leads (16.58x16.58)
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2132 Series

Part	Package / Case	Package / Case	Channel Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Voltage - Supply [Max]	Voltage - Supply [Min]	Input Type	Mounting Type	Gate Type	Operating Temperature [Max]	Operating Temperature [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Number of Drivers	Supplier Device Package	Driven Configuration	High Side Voltage - Max (Bootstrap) [Max]	Package / Case [x]	Package / Case [y]	Package / Case
Infineon Technologies IR2132JPBF	32 Leads	44-LCC (J-Lead)	3-Phase	500 mA	250 mA	2.2 V	0.8 V	20 V	10 VDC	Inverting	Surface Mount	IGBT N-Channel MOSFET	150 °C	-40 °C	80 ns	35 ns	6	44-PLCC 32 Leads (16.58x16.58)	Half-Bridge	600 V
Infineon Technologies IR2132SPBF		28-SOIC	3-Phase	500 mA	250 mA	2.2 V	0.8 V	20 V	10 VDC	Inverting	Surface Mount	IGBT MOSFET N-Channel MOSFET	150 °C	-40 °C	80 ns	35 ns	6	28-SOIC	Half-Bridge	600 V	0.295 in	7.5 mm
Infineon Technologies IR2132JTR	32 Leads	44-LCC (J-Lead)	3-Phase	500 mA	250 mA	2.2 V	0.8 V	20 V	10 VDC	Inverting	Surface Mount	IGBT N-Channel MOSFET	150 °C	-40 °C	80 ns	35 ns	6	44-PLCC 32 Leads (16.58x16.58)	Half-Bridge	600 V
Infineon Technologies IR2132STR		28-SOIC	3-Phase	500 mA	250 mA	2.2 V	0.8 V	20 V	10 VDC	Inverting	Surface Mount	IGBT N-Channel MOSFET	150 °C	-40 °C	80 ns	35 ns	6	28-SOIC	Half-Bridge	600 V	0.295 in	7.5 mm
Infineon Technologies IR2132JTRPBF	32 Leads	44-LCC (J-Lead)	3-Phase	500 mA	250 mA	2.2 V	0.8 V	20 V	10 VDC	Inverting	Surface Mount	IGBT N-Channel MOSFET	150 °C	-40 °C	80 ns	35 ns	6	44-PLCC 32 Leads (16.58x16.58)	Half-Bridge	600 V
Infineon Technologies IR2132	0.6 in	28-DIP	3-Phase	500 mA	250 mA	2.2 V	0.8 V	20 V	10 VDC	Inverting	Through Hole	IGBT N-Channel MOSFET	150 °C	-40 °C	80 ns	35 ns	6	28-PDIP	Half-Bridge	600 V			15.24 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.13
		10	$ 5.54
		25	$ 5.28
		100	$ 4.59
		250	$ 4.54
LCSC	Piece	1	$ 12.69
		200	$ 4.91
		500	$ 4.74
		1134	$ 4.66

Description

General part information

IR2132 Series

600 V Three Phase Driver IC with typical 0.25 A source and 0.5 A sink currents in 44 Lead PLCC package for IGBTs and MOSFETs. Also available in 28 Lead PIDP and 28 Lead SOICWB.

Documents

Technical documentation and resources