IR2132 Series

Catalog

EICEDRIVER™ 600 V THREE PHASE DRIVER IC WITH TYPICAL 0.25 A SOURCE AND 0.5 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT PLCC44 PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: FAULT REPORTING, OPERATIONAL AMPLIFIER, OVER-CURRENT PROTECTION (ITRIP), SEPARATE PIN FOR LOGIC GROUND, SHOOT THROUGH PROTECTION

Part	Package / Case	Package / Case	Channel Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Voltage - Supply [Max]	Voltage - Supply [Min]	Input Type	Mounting Type	Gate Type	Operating Temperature [Max]	Operating Temperature [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Number of Drivers	Supplier Device Package	Driven Configuration	High Side Voltage - Max (Bootstrap) [Max]	Package / Case [x]	Package / Case [y]	Package / Case
Infineon Technologies IR2132JPBF	32 Leads	44-LCC (J-Lead)	3-Phase	500 mA	250 mA	2.2 V	0.8 V	20 V	10 VDC	Inverting	Surface Mount	IGBT N-Channel MOSFET	150 °C	-40 °C	80 ns	35 ns	6	44-PLCC 32 Leads (16.58x16.58)	Half-Bridge	600 V
Infineon Technologies IR2132SPBF		28-SOIC	3-Phase	500 mA	250 mA	2.2 V	0.8 V	20 V	10 VDC	Inverting	Surface Mount	IGBT MOSFET N-Channel MOSFET	150 °C	-40 °C	80 ns	35 ns	6	28-SOIC	Half-Bridge	600 V	0.295 in	7.5 mm
Infineon Technologies IR2132JTR	32 Leads	44-LCC (J-Lead)	3-Phase	500 mA	250 mA	2.2 V	0.8 V	20 V	10 VDC	Inverting	Surface Mount	IGBT N-Channel MOSFET	150 °C	-40 °C	80 ns	35 ns	6	44-PLCC 32 Leads (16.58x16.58)	Half-Bridge	600 V
Infineon Technologies IR2132STR		28-SOIC	3-Phase	500 mA	250 mA	2.2 V	0.8 V	20 V	10 VDC	Inverting	Surface Mount	IGBT N-Channel MOSFET	150 °C	-40 °C	80 ns	35 ns	6	28-SOIC	Half-Bridge	600 V	0.295 in	7.5 mm
Infineon Technologies IR2132JTRPBF	32 Leads	44-LCC (J-Lead)	3-Phase	500 mA	250 mA	2.2 V	0.8 V	20 V	10 VDC	Inverting	Surface Mount	IGBT N-Channel MOSFET	150 °C	-40 °C	80 ns	35 ns	6	44-PLCC 32 Leads (16.58x16.58)	Half-Bridge	600 V
Infineon Technologies IR2132	0.6 in	28-DIP	3-Phase	500 mA	250 mA	2.2 V	0.8 V	20 V	10 VDC	Inverting	Through Hole	IGBT N-Channel MOSFET	150 °C	-40 °C	80 ns	35 ns	6	28-PDIP	Half-Bridge	600 V			15.24 mm