STGD3NC120H-1

Obsolete

STMicroelectronics

TRANS IGBT CHIP N 1200V 16A 3-PIN TO-251 TUBE

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STGD3NC120H-1

Obsolete

STMicroelectronics

TRANS IGBT CHIP N 1200V 16A 3-PIN TO-251 TUBE

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGD3NC120H-1

Current - Collector (Ic) (Max) [Max]	16 A
Current - Collector Pulsed (Icm)	20 A
Gate Charge	24 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power - Max [Max]	105 W
Supplier Device Package	IPAK (TO-251)
Switching Energy	236 µJ, 290 µJ
Td (on/off) @ 25°C	15 ns, 118 ns
Test Condition	15 V, 10 Ohm, 800 V, 3 A
Vce(on) (Max) @ Vge, Ic	2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

STGD3HF60HDT4 Series

4.5 A, 600 V very fast IGBT with Ultrafast diode

Part	Switching Energy	Vce(on) (Max) @ Vge, Ic	Package / Case	Current - Collector Pulsed (Icm)	Operating Temperature	Gate Charge	Reverse Recovery Time (trr)	Test Condition	Mounting Type	Supplier Device Package	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C
STMicroelectronics STGD3NB60SDT4	1.15 mJ	1.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	25 A	175 °C	18 nC	1.7 µs	3 A 15 V 480 V 1000 Ohm	Surface Mount	DPAK	125 µs	600 V
STMicroelectronics STGD3NC120H-1	236 µJ 290 µJ	2.8 V	IPAK TO-251-3 Short Leads TO-251AA	20 A		24 nC		3 A 10 Ohm 15 V 800 V	Through Hole	IPAK (TO-251)	15 ns 118 ns	1200 V	105 W	16 A	-55 °C	150 °C
STMicroelectronics STGD3HF60HDT4	12 µJ 19 µJ	2.95 V	DPAK (2 Leads + Tab) SC-63 TO-252-3			12 nC	85 ns	1.5 A 15 V 100 Ohm 400 V	Surface Mount	DPAK		600 V	38 W	7.5 A	-55 °C	150 °C	11 ns	60 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STGD3HF60HDT4 Series

These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses.

Documents

Technical documentation and resources

No documents available