STGD3HF60HDT4 Series

4.5 A, 600 V very fast IGBT with Ultrafast diode

Catalog

4.5 A, 600 V very fast IGBT with Ultrafast diode

Part	Switching Energy	Vce(on) (Max) @ Vge, Ic	Package / Case	Current - Collector Pulsed (Icm)	Operating Temperature	Gate Charge	Reverse Recovery Time (trr)	Test Condition	Mounting Type	Supplier Device Package	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C
STMicroelectronics STGD3NB60SDT4	1.15 mJ	1.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	25 A	175 °C	18 nC	1.7 µs	3 A 15 V 480 V 1000 Ohm	Surface Mount	DPAK	125 µs	600 V
STMicroelectronics STGD3NC120H-1	236 µJ 290 µJ	2.8 V	IPAK TO-251-3 Short Leads TO-251AA	20 A		24 nC		3 A 10 Ohm 15 V 800 V	Through Hole	IPAK (TO-251)	15 ns 118 ns	1200 V	105 W	16 A	-55 °C	150 °C
STMicroelectronics STGD3HF60HDT4	12 µJ 19 µJ	2.95 V	DPAK (2 Leads + Tab) SC-63 TO-252-3			12 nC	85 ns	1.5 A 15 V 100 Ohm 400 V	Surface Mount	DPAK		600 V	38 W	7.5 A	-55 °C	150 °C	11 ns	60 ns

Catalog

4.5 A, 600 V very fast IGBT with Ultrafast diode

Description

These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses.