PMDXB950UPEZ

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Nexperia USA Inc.

TRANSISTOR MOSFET ARRAY DUAL P-CH 20V 0.5A 8-PIN DFN1010B-6 T/R

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PMDXB950UPEZ

Active

Nexperia USA Inc.

TRANSISTOR MOSFET ARRAY DUAL P-CH 20V 0.5A 8-PIN DFN1010B-6 T/R

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

PMDXB950UPE Series

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMDXB950UPEZ

Channel Count	2
Configuration	P-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id)	500 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Max)	2.1 nC
Input Capacitance (Ciss) (Max)	43 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-XFDFN Exposed Pad
Package Name	DFN1010B-6
Power - Max	265 mW
Rds On (Max)	1.4 Ohm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	950 mV

PMDXB950UPE Series

20 V, dual P-channel Trench MOSFET

Part	Package Name	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Technology	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	FET Feature	Input Capacitance (Ciss) (Max)	Channel Count	Configuration	Configuration - Features	Rds On (Max)	Package / Case	Current - Continuous Drain (Id)	Power - Max	Gate Charge (Max)
Nexperia USA Inc. PMDXB950UPEZ	DFN1010B-6	20 V	950 mV	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	Logic Level Gate	43 pF	2	P-Channel	Dual	1.4 Ohm	6-XFDFN Exposed Pad	500 mA	265 mW	2.1 nC