20 V, dual P-channel Trench MOSFET
20 V, dual P-channel Trench MOSFET
| Part | Package Name | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | Technology | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | FET Feature | Input Capacitance (Ciss) (Max) | Channel Count | Configuration | Configuration - Features | Rds On (Max) | Package / Case | Current - Continuous Drain (Id) | Power - Max | Gate Charge (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | DFN1010B-6 | 20 V | 950 mV | MOSFET (Metal Oxide) | Surface Mount | -55 °C | 150 °C | Logic Level Gate | 43 pF | 2 | P-Channel | Dual | 1.4 Ohm | 6-XFDFN Exposed Pad | 500 mA | 265 mW | 2.1 nC |