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INFINEON BSC014N04LSIATMA1

BSC014N04LSIATMA1

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INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 1.45 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE

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INFINEON BSC014N04LSIATMA1

BSC014N04LSIATMA1

Active
INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 1.45 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE

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Description

General part information

BSC014 Series

New 40V and 60V product families, feature not only the industry’s lowest RDS(on)but also a perfect switching behavior for fast switching applications. 15% lower RDS(on)and 31% lower figure of merit (RDS(on)x Qg) compared to alternative devices has been realized by advanced thin wafer technology.

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC014N04LSIATMA1
Current - Continuous Drain (Id) (Ta)31 A
Current - Continuous Drain (Id) (Tc)100 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)55 nC
Input Capacitance (Ciss) (Max)4000 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TDSON-8 FL
Power Dissipation (Max)96 W, 2.5 W
Rds On (Max)1.45 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

    BSC014N04LSIATMA1 | INFINEON | Zenode.ai