BSC014NE2LSIATMA1

LTB

INFINEON

OPTIMOS™ N-CHANNEL POWER MOSFET 25 V ; SUPERSO8 5X6 PACKAGE; 1.4 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE

Find alt

Alpha

BSC014NE2LSIATMA1

LTB

INFINEON

OPTIMOS™ N-CHANNEL POWER MOSFET 25 V ; SUPERSO8 5X6 PACKAGE; 1.4 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

BSC014 Series

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).

Technical Specifications

Parameters and characteristics for this part

Specification	BSC014NE2LSIATMA1

Current - Continuous Drain (Id) (Ta)	33 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	39 nC
Input Capacitance (Ciss) (Max)	2700 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Name	PG-TDSON-8-7
Power Dissipation (Max)	74 W, 2.5 W
Rds On (Max)	1.4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

BSC014 Series

Part	Package Name	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)	Power Dissipation (Max)	FET Type	Vgs(th) (Max)	Vgs (Max)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)
INFINEON BSC014N06LS5ATMA1	PG-TDSON-8-7	MOSFET (Metal Oxide)	Surface Mount	60 V	8-PowerTDFN
INFINEON BSC014NE2LSIATMA1	PG-TDSON-8-7	MOSFET (Metal Oxide)	Surface Mount	25 V	8-PowerTDFN	39 nC	10 V	4.5 V	-55 °C	150 °C	33 A	2.5 W 74 W	N-Channel	2 V	20 V	1.4 mOhm	2700 pF
INFINEON BSC014N04LSATMA1	SuperSO8	MOSFET (Metal Oxide)	Surface Mount	40 V	8-PowerTDFN	61 nC	10 V	4.5 V	-55 °C	175 °C	32 A	2.5 W 96 W	N-Channel	2 V	20 V	1.4 mOhm	4300 pF
INFINEON BSC014N04LSIATMA1	PG-TDSON-8 FL	MOSFET (Metal Oxide)	Surface Mount	40 V	8-PowerTDFN	55 nC	10 V	4.5 V	-55 °C	150 °C	31 A	2.5 W 96 W	N-Channel	2 V	20 V	1.45 mOhm	4000 pF	100 A
INFINEON BSC014N06NSSCATMA1	PG-WSON-8-2	MOSFET (Metal Oxide)	Surface Mount	60 V	8-PowerWDFN	104 nC 104 nC	10 V	6 V	-55 °C	175 °C		3 W 188 W	N-Channel	3.3 V	20 V	1.4 mOhm	8125 pF	261 A
INFINEON BSC014N06NSATMA1	PG-TDSON-8-17	MOSFET (Metal Oxide)	Surface Mount	60 V	8-PowerTDFN	89 nC	10 V	6 V	-55 °C	175 °C	30 A	2.5 W 156 W	N-Channel	2.8 V	20 V	1.45 mOhm	6500 pF	100 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

BSC014NE2LSIATMA1 | Datasheet