STH200N10WF7-2
ActiveN-CHANNEL 100 V, 3.2 MOHM TYP., 180 A, STRIPFET F7 POWER MOSFET IN AN H2PAK-2 PACKAGE
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STH200N10WF7-2
ActiveN-CHANNEL 100 V, 3.2 MOHM TYP., 180 A, STRIPFET F7 POWER MOSFET IN AN H2PAK-2 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STH200N10WF7-2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 180 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4430 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) [Max] | 340 W |
| Rds On (Max) @ Id, Vgs | 4 mOhm |
| Supplier Device Package | H2Pak-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STH200N10WF7-2 Series
This N-channel Power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.
Documents
Technical documentation and resources