STH200N10WF7-2 Series

N-channel 100 V, 3.2 mOhm typ., 180 A, STripFET F7 Power MOSFET in an H2PAK-2 package

Catalog

N-channel 100 V, 3.2 mOhm typ., 180 A, STripFET F7 Power MOSFET in an H2PAK-2 package

Part	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max) [Max]
STMicroelectronics STH200N10WF7-2	N-Channel	MOSFET (Metal Oxide)	4430 pF	4.5 V	20 V	93 nC	-55 °C	175 ░C	4 mOhm	10 V	180 A	Surface Mount	H2Pak-2	100 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	340 W

Catalog

N-channel 100 V, 3.2 mOhm typ., 180 A, STripFET F7 Power MOSFET in an H2PAK-2 package

Description

This N-channel Power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.