IR2118STRPBF

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EICEDRIVER™ 600 V HIGH-SIDE DRIVER IC WITH TYPICAL 0.25 A SOURCE AND 0.5 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: SINGLE INPUT

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IR2118STRPBF

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INFINEON

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Description Specifications Series Pricing CAD Documents

Description

General part information

IR2118 Series

600 V High Side Driver IC with typical 0.25 A source and 0.5 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP.

Technical Specifications

Parameters and characteristics for this part

Specification	IR2118STRPBF

Channel Type	Single
Current - Peak Output (Sink)	500 mA
Current - Peak Output (Source)	250 mA
Driven Configuration	High-Side
Fall Time (Typ)	40 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Inverting
Logic Voltage - VIH	9.5 V
Logic Voltage - VIL	6 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	80 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR2118 Series

Part	Gate Type	Logic Voltage - VIH	Logic Voltage - VIL	Channel Type	Number of Drivers	Input Type	Package Length	Package Name	Package Width	Operating Temperature (Min)	Operating Temperature (Max)	High Side Voltage - Max (Bootstrap)	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Driven Configuration	Fall Time (Typ)	Rise Time (Typ)	Mounting Type	Gate Channel
INFINEON IR2118PBF	IGBT MOSFET N-Channel MOSFET	9.5 V	6 V	Single	1	Inverting	0.3 in	8-DIP 8-PDIP	7.62 mm	-40 °C	150 °C	600 V	10 VDC	20 V	500 mA	250 mA	High-Side	40 ns	80 ns	Through Hole	N-Channel
INFINEON IR2118	IGBT MOSFET N-Channel MOSFET	9.5 V	6 V	Single	1	Inverting	0.3 in	8-DIP 8-PDIP	7.62 mm	-40 °C	150 °C	600 V	10 VDC	20 V	500 mA	250 mA	High-Side	40 ns	80 ns	Through Hole	N-Channel
INFINEON IR2118STRPBF	IGBT MOSFET N-Channel MOSFET	9.5 V	6 V	Single	1	Inverting	0.154 in	8-SOIC	3.9 mm	-40 °C	150 °C	600 V	10 VDC	20 V	500 mA	250 mA	High-Side	40 ns	80 ns	Surface Mount	N-Channel
INFINEON 98-0231	IGBT MOSFET N-Channel MOSFET	9.5 V	6 V	Single	1	Inverting	0.154 in	8-SOIC	3.9 mm	-40 °C	150 °C	600 V	10 VDC	20 V	500 mA	250 mA	High-Side	40 ns	80 ns	Surface Mount	N-Channel
INFINEON IR2118STR	IGBT MOSFET N-Channel MOSFET	9.5 V	6 V	Single	1	Inverting	0.154 in	8-SOIC	3.9 mm	-40 °C	150 °C	600 V	10 VDC	20 V	500 mA	250 mA	High-Side	40 ns	80 ns	Surface Mount	N-Channel
INFINEON IR2118SPBF	IGBT MOSFET N-Channel MOSFET	9.5 V	6 V	Single	1	Inverting	0.154 in	8-SOIC	3.9 mm	-40 °C	150 °C	600 V	10 VDC	20 V	500 mA	250 mA	High-Side	40 ns	80 ns	Surface Mount	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Gate driver IC MOSFET - EiceDRIVER™ and CoolMOS™ CFD2 Join for High Efficiency in Refrigeration - Bodos Power

Application Note AN-978 HV Floating MOS-Gate Driver ICs

IR2117

IR2118STRPBF | Datasheet