IR2118 Series

Manufacturer: INFINEON

Catalog

EICEDRIVER™ 600 V HIGH-SIDE DRIVER IC WITH TYPICAL 0.25 A SOURCE AND 0.5 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT PDIP8 PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: SINGLE INPUT

Part	Gate Type	Logic Voltage - VIH	Logic Voltage - VIL	Channel Type	Number of Drivers	Input Type	Package Length	Package Name	Package Width	Operating Temperature (Min)	Operating Temperature (Max)	High Side Voltage - Max (Bootstrap)	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Driven Configuration	Fall Time (Typ)	Rise Time (Typ)	Mounting Type	Gate Channel
INFINEON IR2118PBF	IGBT MOSFET N-Channel MOSFET	9.5 V	6 V	Single	1	Inverting	0.3 in	8-DIP 8-PDIP	7.62 mm	-40 °C	150 °C	600 V	10 VDC	20 V	500 mA	250 mA	High-Side	40 ns	80 ns	Through Hole	N-Channel
INFINEON IR2118	IGBT MOSFET N-Channel MOSFET	9.5 V	6 V	Single	1	Inverting	0.3 in	8-DIP 8-PDIP	7.62 mm	-40 °C	150 °C	600 V	10 VDC	20 V	500 mA	250 mA	High-Side	40 ns	80 ns	Through Hole	N-Channel
INFINEON IR2118STRPBF	IGBT MOSFET N-Channel MOSFET	9.5 V	6 V	Single	1	Inverting	0.154 in	8-SOIC	3.9 mm	-40 °C	150 °C	600 V	10 VDC	20 V	500 mA	250 mA	High-Side	40 ns	80 ns	Surface Mount	N-Channel
INFINEON 98-0231	IGBT MOSFET N-Channel MOSFET	9.5 V	6 V	Single	1	Inverting	0.154 in	8-SOIC	3.9 mm	-40 °C	150 °C	600 V	10 VDC	20 V	500 mA	250 mA	High-Side	40 ns	80 ns	Surface Mount	N-Channel
INFINEON IR2118STR	IGBT MOSFET N-Channel MOSFET	9.5 V	6 V	Single	1	Inverting	0.154 in	8-SOIC	3.9 mm	-40 °C	150 °C	600 V	10 VDC	20 V	500 mA	250 mA	High-Side	40 ns	80 ns	Surface Mount	N-Channel
INFINEON IR2118SPBF	IGBT MOSFET N-Channel MOSFET	9.5 V	6 V	Single	1	Inverting	0.154 in	8-SOIC	3.9 mm	-40 °C	150 °C	600 V	10 VDC	20 V	500 mA	250 mA	High-Side	40 ns	80 ns	Surface Mount	N-Channel