Specification	MUR20020CTR

Current - Average Rectified (Io) (per Diode)	100 A
Current - Reverse Leakage	25 µA
Diode Configuration	Common Anode
Diode Pair Count	1 pair
Mounting Type	Chassis Mount
Operating Temperature - Junction (Max)	150 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	Twin Tower
Package Name	Twin Tower
Reverse Recovery Time (trr)	75 ns
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	200 V
Voltage - Forward (Vf) (Max)	1.3 V

MUR20020 Series

Part	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max)	Technology	Voltage - Forward (Vf) (Max)	Current - Reverse Leakage	Reverse Recovery Time (trr)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Package / Case	Diode Pair Count	Diode Configuration	Package Name	Mounting Type	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)
GeneSiC Semiconductor MUR20020CTR	100 A	200 V	Standard	1.3 V	25 µA	75 ns	150 °C	-55 °C	Twin Tower	1 pair	Common Anode	Twin Tower	Chassis Mount	500 ns	200 mA
GeneSiC Semiconductor MUR20020CT	100 A	200 V	Standard	1.3 V	25 µA	75 ns	150 °C	-55 °C	Twin Tower	1 pair	Common Cathode	Twin Tower	Chassis Mount	500 ns	200 mA
GeneSiC Semiconductor MUR20020CT	100 A	200 V	Standard	1.3 V	25 µA	75 ns	150 °C	-55 °C	Twin Tower	1 pair	Common Cathode	Twin Tower	Chassis Mount	500 ns	200 mA
GeneSiC Semiconductor MUR20020CTR	100 A	200 V	Standard	1.3 V	25 µA	75 ns	150 °C	-55 °C	Twin Tower	1 pair	Common Anode	Twin Tower	Chassis Mount	500 ns	200 mA

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