MUR20020 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULE GP 200V 100A 2TOWER
| Part | Current - Average Rectified (Io) (per Diode) | Voltage - DC Reverse (Vr) (Max) | Technology | Voltage - Forward (Vf) (Max) | Current - Reverse Leakage | Reverse Recovery Time (trr) | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Package / Case | Diode Pair Count | Diode Configuration | Package Name | Mounting Type | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 100 A | 200 V | Standard | 1.3 V | 25 µA | 75 ns | 150 °C | -55 °C | Twin Tower | 1 pair | Common Anode | Twin Tower | Chassis Mount | 500 ns | 200 mA |
GeneSiC Semiconductor | 100 A | 200 V | Standard | 1.3 V | 25 µA | 75 ns | 150 °C | -55 °C | Twin Tower | 1 pair | Common Cathode | Twin Tower | Chassis Mount | 500 ns | 200 mA |
GeneSiC Semiconductor | 100 A | 200 V | Standard | 1.3 V | 25 µA | 75 ns | 150 °C | -55 °C | Twin Tower | 1 pair | Common Cathode | Twin Tower | Chassis Mount | 500 ns | 200 mA |
GeneSiC Semiconductor | 100 A | 200 V | Standard | 1.3 V | 25 µA | 75 ns | 150 °C | -55 °C | Twin Tower | 1 pair | Common Anode | Twin Tower | Chassis Mount | 500 ns | 200 mA |