IRF6620TRPBF

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Infineon Technologies

IRF6620 - 12V-300V N-CHANNEL POW

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Infineon Technologies

IRF6620 - 12V-300V N-CHANNEL POW

Technical Specifications

Parameters and characteristics for this part

Specification	IRF6620TRPBF

Current - Continuous Drain (Id) @ 25°C	27 A, 150 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	4130 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	DirectFET™ Isometric MX
Power Dissipation (Max)	2.8 W, 89 W
Rds On (Max) @ Id, Vgs	2.7 mOhm
Supplier Device Package	DIRECTFET™ MX
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.45 V

Part	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
Infineon Technologies IRF6620TRPBF	DirectFET™ Isometric MX	N-Channel	4130 pF	27 A 150 A	42 nC	DIRECTFET™ MX	2.8 W 89 W	Surface Mount	20 V	4.5 V 10 V	150 °C	-40 °C	MOSFET (Metal Oxide)	20 V	2.7 mOhm	2.45 V
Infineon Technologies IRF6620TRPBF	DirectFET™ Isometric MX	N-Channel	4130 pF	27 A 150 A	42 nC	DIRECTFET™ MX	2.8 W 89 W	Surface Mount	20 V	4.5 V 10 V	150 °C	-40 °C	MOSFET (Metal Oxide)	20 V	2.7 mOhm	2.45 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 27A (Ta), 150A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX

Technical documentation and resources