IRF6620 - 12V-300V N-CHANNEL POW
| Part | Package / Case | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Power Dissipation (Max) | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Vgs (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | DirectFET™ Isometric MX | N-Channel | 4130 pF | 27 A 150 A | 42 nC | DIRECTFET™ MX | 2.8 W 89 W | Surface Mount | 20 V | 4.5 V 10 V | 150 °C | -40 °C | MOSFET (Metal Oxide) | 20 V | 2.7 mOhm | 2.45 V |
Infineon Technologies | DirectFET™ Isometric MX | N-Channel | 4130 pF | 27 A 150 A | 42 nC | DIRECTFET™ MX | 2.8 W 89 W | Surface Mount | 20 V | 4.5 V 10 V | 150 °C | -40 °C | MOSFET (Metal Oxide) | 20 V | 2.7 mOhm | 2.45 V |