AIMBG120R010M1XTMA1

Active

INFINEON

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 205 A, 1.2 KV, 0.0087 OHM, TO-263

AIMBG120R010M1XTMA1

Active

INFINEON

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 205 A, 1.2 KV, 0.0087 OHM, TO-263

Description Specifications Series Pricing CAD Documents

Description

General part information

AIMBG120 Series

With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.

Technical Specifications

Parameters and characteristics for this part

Specification	AIMBG120R010M1XTMA1

Current - Continuous Drain (Id)	187 A
Current - Continuous Drain (Id) (Tc)	205 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On)	18 V
Drive Voltage (Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	178 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	5703 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C, 175 °C
Operating Temperature (Min)	-55 °C, -55 °C
Package Leads	7 Leads
Package Name	PG-TO263-7, D2PAK, PG-TO263-7-12
Power Dissipation (Max)	882 W
Qualification	AEC-Q101
Rds On (Max)	11.3 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	25 V
Vgs(th) (Max)	5.1 V

AIMBG120 Series

Part	Rds On (Max)	Mounting Type	Package Name	Technology	Grade	Package Leads	Gate Charge (Max)	Vgs(th) (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Qualification	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id)
INFINEON AIMBG120R120M1XTMA1	150 mOhm	Surface Mount	D2PAK PG-TO263-7	SiCFET (Silicon Carbide)	Automotive	7 Leads	18 nC	5.1 V	130 W	1200 V	AEC-Q101	N-Channel	20 V	18 V	458 pF 458 pF	-55 °C	175 °C	-10 V	25 V	22 A
INFINEON AIMBG120R010M1XTMA1	11.3 mOhm	Surface Mount	D2PAK PG-TO263-7 PG-TO263-7-12	SiCFET (Silicon Carbide)	Automotive	7 Leads	178 nC	5.1 V	882 W	1200 V	AEC-Q101	N-Channel	20 V	18 V	5703 pF	-55 °C -55 °C	175 °C 175 °C	-10 V	25 V	205 A	187 A
INFINEON AIMBG120R060M1XTMA1	75 mOhm	Surface Mount	D2PAK PG-TO263-7-12	SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide)	Automotive	7 Leads	32 nC	5.1 V	202 W	1200 V	AEC-Q101	N-Channel	20 V	18 V	880 pF	-55 °C	175 °C	-5 V	23 V	38 A
INFINEON AIMBG120R160M1XTMA1	200 mOhm	Surface Mount	D2PAK PG-TO263-7-12	SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide)	Automotive	7 Leads	14 nC	5.1 V	106 W	1200 V	AEC-Q101	N-Channel	20 V	18 V		-55 °C	175 °C	-5 V	23 V	17 A
INFINEON AIMBG120R040M1XTMA1	50 mOhm	Surface Mount	D2PAK PG-TO263-7 PG-TO263-7-12	SiCFET (Silicon Carbide)	Automotive	7 Leads	43 nC	5.1 V	268 W	1200 V	AEC-Q101	N-Channel	20 V	18 V	1264 pF	-55 °C -55 °C	175 °C 175 °C	-10 V	25 V	54 A 54 A	48 A
INFINEON AIMBG120R020M1XTMA1	25 mOhm	Surface Mount	D2PAK PG-TO263-7-12	SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide)	Automotive	7 Leads	82 nC	5.1 V	468 W	1200 V	AEC-Q101	N-Channel	20 V	18 V	2667 pF	-55 °C	175 °C	-5 V	23 V	104 A
INFINEON AIMBG120R080M1XTMA1	100 mOhm	Surface Mount	D2PAK PG-TO263-7 PG-TO263-7-12	SiCFET (Silicon Carbide)	Automotive	7 Leads	24 nC	5.1 V	168 W	1200 V	AEC-Q101	N-Channel	20 V	18 V	671 pF	-55 °C -55 °C	175 °C 175 °C	-10 V	25 V	30.6 A	30 A
INFINEON AIMBG120R030M1XTMA1	38 mOhm	Surface Mount	D2PAK PG-TO263-7-12	SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide)	Automotive	7 Leads	57 nC	5.1 V	333 W	1200 V	AEC-Q101	N-Channel	20 V	18 V	1738 pF	-55 °C	175 °C	-5 V	23 V	70 A

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

AIMBG120R010M1XTMA1 | Datasheet