AIMBG120 Series

Manufacturer: INFINEON

Catalog

TRANS MOSFET N-CH SIC 1.2KV 22A 8-PIN(7+TAB) TO-263 T/R AUTOMOTIVE AEC-Q101

Part	Rds On (Max)	Mounting Type	Package Name	Technology	Grade	Package Leads	Gate Charge (Max)	Vgs(th) (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Qualification	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id)
INFINEON AIMBG120R120M1XTMA1	150 mOhm	Surface Mount	D2PAK PG-TO263-7	SiCFET (Silicon Carbide)	Automotive	7 Leads	18 nC	5.1 V	130 W	1200 V	AEC-Q101	N-Channel	20 V	18 V	458 pF 458 pF	-55 °C	175 °C	-10 V	25 V	22 A
INFINEON AIMBG120R010M1XTMA1	11.3 mOhm	Surface Mount	D2PAK PG-TO263-7 PG-TO263-7-12	SiCFET (Silicon Carbide)	Automotive	7 Leads	178 nC	5.1 V	882 W	1200 V	AEC-Q101	N-Channel	20 V	18 V	5703 pF	-55 °C -55 °C	175 °C 175 °C	-10 V	25 V	205 A	187 A
INFINEON AIMBG120R060M1XTMA1	75 mOhm	Surface Mount	D2PAK PG-TO263-7-12	SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide)	Automotive	7 Leads	32 nC	5.1 V	202 W	1200 V	AEC-Q101	N-Channel	20 V	18 V	880 pF	-55 °C	175 °C	-5 V	23 V	38 A
INFINEON AIMBG120R160M1XTMA1	200 mOhm	Surface Mount	D2PAK PG-TO263-7-12	SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide)	Automotive	7 Leads	14 nC	5.1 V	106 W	1200 V	AEC-Q101	N-Channel	20 V	18 V		-55 °C	175 °C	-5 V	23 V	17 A
INFINEON AIMBG120R040M1XTMA1	50 mOhm	Surface Mount	D2PAK PG-TO263-7 PG-TO263-7-12	SiCFET (Silicon Carbide)	Automotive	7 Leads	43 nC	5.1 V	268 W	1200 V	AEC-Q101	N-Channel	20 V	18 V	1264 pF	-55 °C -55 °C	175 °C 175 °C	-10 V	25 V	54 A 54 A	48 A
INFINEON AIMBG120R020M1XTMA1	25 mOhm	Surface Mount	D2PAK PG-TO263-7-12	SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide)	Automotive	7 Leads	82 nC	5.1 V	468 W	1200 V	AEC-Q101	N-Channel	20 V	18 V	2667 pF	-55 °C	175 °C	-5 V	23 V	104 A
INFINEON AIMBG120R080M1XTMA1	100 mOhm	Surface Mount	D2PAK PG-TO263-7 PG-TO263-7-12	SiCFET (Silicon Carbide)	Automotive	7 Leads	24 nC	5.1 V	168 W	1200 V	AEC-Q101	N-Channel	20 V	18 V	671 pF	-55 °C -55 °C	175 °C 175 °C	-10 V	25 V	30.6 A	30 A
INFINEON AIMBG120R030M1XTMA1	38 mOhm	Surface Mount	D2PAK PG-TO263-7-12	SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide)	Automotive	7 Leads	57 nC	5.1 V	333 W	1200 V	AEC-Q101	N-Channel	20 V	18 V	1738 pF	-55 °C	175 °C	-5 V	23 V	70 A