BSS138PS,115

Active

Nexperia USA Inc.

60 V, 320 MA DUAL N-CHANNEL TRENCH MOSFET

Find alt

Alpha

BSS138PS,115

Active

Nexperia USA Inc.

60 V, 320 MA DUAL N-CHANNEL TRENCH MOSFET

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

BSS138PS Series

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	BSS138PS,115

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id)	320 mA
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Max)	0.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	50 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Package Name	6-TSSOP
Power - Max	420 mW
Qualification	AEC-Q101
Rds On (Max)	1.6 Ohm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1.5 V

BSS138PS Series

60 V, 320 mA dual N-channel Trench MOSFET

Part	Operating Temperature	Qualification	Input Capacitance (Ciss) (Max)	Rds On (Max)	Vgs(th) (Max)	Mounting Type	Current - Continuous Drain (Id)	Drain to Source Voltage (Vdss)	Grade	Package Name	Technology	Channel Count	Configuration	Configuration - Features	FET Feature	Package / Case	Power - Max	Gate Charge (Max)
Nexperia USA Inc. BSS138PS,115	150 °C	AEC-Q101	50 pF	1.6 Ohm	1.5 V	Surface Mount	320 mA	60 V	Automotive	6-TSSOP	MOSFET (Metal Oxide)	2	N-Channel	Dual	Logic Level Gate	6-TSSOP SC-88 SOT-363	420 mW	0.8 nC