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60 V, 320 mA dual N-channel Trench MOSFET
Description
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Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, 320 mA dual N-channel Trench MOSFET
60 V, 320 mA dual N-channel Trench MOSFET
| Part | Operating Temperature | Qualification | Input Capacitance (Ciss) (Max) | Rds On (Max) | Vgs(th) (Max) | Mounting Type | Current - Continuous Drain (Id) | Drain to Source Voltage (Vdss) | Grade | Package Name | Technology | Channel Count | Configuration | Configuration - Features | FET Feature | Package / Case | Power - Max | Gate Charge (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 150 °C | AEC-Q101 | 50 pF | 1.6 Ohm | 1.5 V | Surface Mount | 320 mA | 60 V | Automotive | 6-TSSOP | MOSFET (Metal Oxide) | 2 | N-Channel | Dual | Logic Level Gate | 6-TSSOP SC-88 SOT-363 | 420 mW | 0.8 nC |