Transistor MOSFET N-CH 60V 5.7A 6-Pin DFN2020MD T/R

BUK6D120-40EX

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Nexperia USA Inc.

TRANSISTOR MOSFET N-CH 40V 5.7A 6-PIN FN2020MD T/R

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BUK6D120-40EX

Active

Nexperia USA Inc.

TRANSISTOR MOSFET N-CH 40V 5.7A 6-PIN FN2020MD T/R

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Description Specifications Series Pricing CAD Documents

Description

General part information

BUK6D120-40E Series

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	BUK6D120-40EX

Current - Continuous Drain (Id) (Ta)	2.9 A
Current - Continuous Drain (Id) (Tc)	5.7 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	3.6 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	113 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UDFN Exposed Pad
Package Name	DFN2020MD-6
Power Dissipation (Max)	7.5 W, 2 W
Qualification	AEC-Q101
Rds On (Max)	120 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

BUK6D120-40E Series

40 V, N-channel Trench MOSFET

Part	Gate Charge (Max)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Grade	Package / Case	Mounting Type	FET Type	Technology	Qualification	Package Name	Drain to Source Voltage (Vdss)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)
Nexperia USA Inc. BUK6D120-40EX	3.6 nC	2.5 V	-55 °C	175 °C	5.7 A	2.9 A	Automotive	6-UDFN Exposed Pad	Surface Mount	N-Channel	MOSFET (Metal Oxide)	AEC-Q101	DFN2020MD-6	40 V	120 mOhm	113 pF	2 W 7.5 W	10 V	4.5 V	20 V