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40 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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40 V, N-channel Trench MOSFET
40 V, N-channel Trench MOSFET
| Part | Gate Charge (Max) | Vgs(th) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) (Tc) | Current - Continuous Drain (Id) (Ta) | Grade | Package / Case | Mounting Type | FET Type | Technology | Qualification | Package Name | Drain to Source Voltage (Vdss) | Rds On (Max) | Input Capacitance (Ciss) (Max) | Power Dissipation (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 3.6 nC | 2.5 V | -55 °C | 175 °C | 5.7 A | 2.9 A | Automotive | 6-UDFN Exposed Pad | Surface Mount | N-Channel | MOSFET (Metal Oxide) | AEC-Q101 | DFN2020MD-6 | 40 V | 120 mOhm | 113 pF | 2 W 7.5 W | 10 V | 4.5 V | 20 V |