IR21064SPBF

Obsolete

INFINEON

IC GATE DRVR HI/LOW SIDE 14SOIC

IR21064SPBF

Obsolete

INFINEON

IC GATE DRVR HI/LOW SIDE 14SOIC

Description Specifications Series Pricing CAD Documents

Description

General part information

IR21064 Series

High-Side or Low-Side Gate Driver IC Non-Inverting 14-SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	IR21064SPBF

Channel Type	Independent
Current - Peak Output (Sink)	0.35 A
Current - Peak Output (Source)	200 mA
Driven Configuration	Low-Side, High-Side
Fall Time (Typ)	50 ns
Gate Channel	N-Channel
Gate Type	IGBT, N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	2.9 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	14-SOIC
Package Width	3.9 mm
Rise Time (Typ)	150 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR21064 Series

Part	Gate Type	Channel Type	Gate Channel	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	High Side Voltage - Max (Bootstrap)	Driven Configuration	Number of Drivers	Package Name	Fall Time (Typ)	Rise Time (Typ)	Input Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Package Length	Package Width	Current - Peak Output (Source)	Current - Peak Output (Sink)	Logic Voltage - VIL	Logic Voltage - VIH
INFINEON IR21064PBF	IGBT MOSFET N-Channel MOSFET	Independent	N-Channel	Through Hole	-40 °C	150 °C	600 V	High-Side Low-Side	2	14-DIP	50 ns	150 ns	Non-Inverting	10 VDC	20 V	0.3 in	7.62 mm	200 mA	0.35 A	0.8 V	2.9 V
INFINEON IR21064	IGBT MOSFET N-Channel MOSFET	Independent	N-Channel	Through Hole	-40 °C	150 °C	600 V	High-Side Low-Side	2	14-DIP	50 ns	150 ns	Non-Inverting	10 VDC	20 V	0.3 in	7.62 mm	200 mA	0.35 A	0.8 V	2.9 V
INFINEON IR21064STRPBF	IGBT MOSFET N-Channel MOSFET	Independent	N-Channel	Surface Mount	-40 °C	150 °C	600 V	High-Side Low-Side	2	14-SOIC	50 ns	150 ns	Non-Inverting	10 VDC	20 V	0.154 in	3.9 mm	200 mA	0.35 A	0.8 V	2.9 V
INFINEON IR21064STR	IGBT MOSFET N-Channel MOSFET	Independent	N-Channel	Surface Mount	-40 °C	150 °C	600 V	High-Side Low-Side	2	14-SOIC	50 ns	150 ns	Non-Inverting	10 VDC	20 V	0.154 in	3.9 mm	200 mA	0.35 A	0.8 V	2.9 V
INFINEON IR21064SPBF	IGBT MOSFET N-Channel MOSFET	Independent	N-Channel	Surface Mount	-40 °C	150 °C	600 V	High-Side Low-Side	2	14-SOIC	50 ns	150 ns	Non-Inverting	10 VDC	20 V	0.154 in	3.9 mm	200 mA	0.35 A	0.8 V	2.9 V
INFINEON IR21064PBF	IGBT MOSFET	Independent	N-Channel	Through Hole	-40 °C	150 °C	600 V	High-Side Low-Side	2	14-DIP	50 ns	150 ns	Non-Inverting	10 VDC	20 V	0.3 in	7.62 mm	200 mA	0.35 A	0.8 V	2.9 V
INFINEON IR21064S	IGBT MOSFET N-Channel MOSFET	Independent	N-Channel	Surface Mount	-40 °C	150 °C	600 V	High-Side Low-Side	2	14-SOIC	50 ns	150 ns	Non-Inverting	10 VDC	20 V	0.154 in	3.9 mm	200 mA	0.35 A	0.8 V	2.9 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IR21064SPBF | Datasheet