IR21064STRPBF

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EICEDRIVER™ 600 V HIGH-SIDE AND LOW-SIDE DRIVER IC WITH TYPICAL 0.2 A SOURCE AND 0.35 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 14N PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: SEPARATE PIN FOR LOGIC GROUND

IR21064STRPBF

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INFINEON

Description Specifications Series Pricing CAD Documents

Description

General part information

IR21064 Series

600 V High and Low Side Driver IC with typical 0.2 A source and 0.35 A sink currents in 14 Lead SOIC package for IGBTs and MOSFETs. Also available in 14 Lead PDIP, 8 Lead SOIC, and 8 Lead PDIP. For the newest version with ourSOI technologywe recommend2ED21064S06J, providing integrated bootstrap diode, better robustness and higher switching frequency

Technical Specifications

Parameters and characteristics for this part

Specification	IR21064STRPBF

Channel Type	Independent
Current - Peak Output (Sink)	0.35 A
Current - Peak Output (Source)	200 mA
Driven Configuration	Low-Side, High-Side
Fall Time (Typ)	50 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	2.9 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	14-SOIC
Package Width	3.9 mm
Rise Time (Typ)	150 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR21064 Series

Part	Gate Type	Channel Type	Gate Channel	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	High Side Voltage - Max (Bootstrap)	Driven Configuration	Number of Drivers	Package Name	Fall Time (Typ)	Rise Time (Typ)	Input Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Package Length	Package Width	Current - Peak Output (Source)	Current - Peak Output (Sink)	Logic Voltage - VIL	Logic Voltage - VIH
INFINEON IR21064PBF	IGBT MOSFET N-Channel MOSFET	Independent	N-Channel	Through Hole	-40 °C	150 °C	600 V	High-Side Low-Side	2	14-DIP	50 ns	150 ns	Non-Inverting	10 VDC	20 V	0.3 in	7.62 mm	200 mA	0.35 A	0.8 V	2.9 V
INFINEON IR21064	IGBT MOSFET N-Channel MOSFET	Independent	N-Channel	Through Hole	-40 °C	150 °C	600 V	High-Side Low-Side	2	14-DIP	50 ns	150 ns	Non-Inverting	10 VDC	20 V	0.3 in	7.62 mm	200 mA	0.35 A	0.8 V	2.9 V
INFINEON IR21064STRPBF	IGBT MOSFET N-Channel MOSFET	Independent	N-Channel	Surface Mount	-40 °C	150 °C	600 V	High-Side Low-Side	2	14-SOIC	50 ns	150 ns	Non-Inverting	10 VDC	20 V	0.154 in	3.9 mm	200 mA	0.35 A	0.8 V	2.9 V
INFINEON IR21064STR	IGBT MOSFET N-Channel MOSFET	Independent	N-Channel	Surface Mount	-40 °C	150 °C	600 V	High-Side Low-Side	2	14-SOIC	50 ns	150 ns	Non-Inverting	10 VDC	20 V	0.154 in	3.9 mm	200 mA	0.35 A	0.8 V	2.9 V
INFINEON IR21064SPBF	IGBT MOSFET N-Channel MOSFET	Independent	N-Channel	Surface Mount	-40 °C	150 °C	600 V	High-Side Low-Side	2	14-SOIC	50 ns	150 ns	Non-Inverting	10 VDC	20 V	0.154 in	3.9 mm	200 mA	0.35 A	0.8 V	2.9 V
INFINEON IR21064PBF	IGBT MOSFET	Independent	N-Channel	Through Hole	-40 °C	150 °C	600 V	High-Side Low-Side	2	14-DIP	50 ns	150 ns	Non-Inverting	10 VDC	20 V	0.3 in	7.62 mm	200 mA	0.35 A	0.8 V	2.9 V
INFINEON IR21064S	IGBT MOSFET N-Channel MOSFET	Independent	N-Channel	Surface Mount	-40 °C	150 °C	600 V	High-Side Low-Side	2	14-SOIC	50 ns	150 ns	Non-Inverting	10 VDC	20 V	0.154 in	3.9 mm	200 mA	0.35 A	0.8 V	2.9 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IR21064STRPBF | Datasheet