IXBK75N170A
ActiveIGBT 1700V 110A 1040W TO264
IXBK75N170A
ActiveIGBT 1700V 110A 1040W TO264
Description
General part information
IXBK75N170 Series
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this "free" intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.
Technical Specifications
Parameters and characteristics for this part
| Specification | IXBK75N170A |
|---|---|
| Current - Collector (Ic) (Max) | 110 A |
| Current - Collector Pulsed (Icm) | 300 A |
| Gate Charge | 358 nC |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-264-3, TO-264AA |
| Package Name | TO-264AA |
| Power - Max | 1040 W |
| Reverse Recovery Time (trr) | 360 ns |
| Switching Energy | 3.8 mJ |
| Switching Energy (Off) | 3.8 mJ |
| Td (off) @ 25°C | 418 ns |
| Td (on) @ 25°C | 26 ns |
| Test Condition Current | 42 A |
| Test Condition Resistance | 1 Ohm |
| Test Condition Voltage | 1360 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 6 V |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
Pricing
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