IXBK75N170 Series

Disc IGBT BiMosfet-High Volt TO-264(3)

Catalog

Disc IGBT BiMosfet-High Volt TO-264(3)

Part	Gate Charge	Operating Temperature (Min)	Operating Temperature (Max)	Reverse Recovery Time (trr)	Vce(on) (Max)	Package / Case	Current - Collector Pulsed (Icm)	Package Name	Power - Max	Input Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Td (off) @ 25°C	Td (on) @ 25°C	Switching Energy	Switching Energy (Off)	Test Condition Voltage	Test Condition Resistance	Test Condition Current	Test Condition Voltage (Secondary)
LITTELFUSE IXBK75N170	350 nC	-55 °C	150 °C	1500 ns	3.1 V	TO-264-3 TO-264AA	580 A	TO-264AA	1040 W	Standard	200 A	1700 V	Through Hole
LITTELFUSE IXBK75N170A	358 nC	-55 °C	150 °C	360 ns	6 V	TO-264-3 TO-264AA	300 A	TO-264AA	1040 W	Standard	110 A	1700 V	Through Hole	418 ns	26 ns	3.8 mJ	3.8 mJ	1360 V	1 Ohm	42 A	15 V

Catalog

Disc IGBT BiMosfet-High Volt TO-264(3)

Description

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this "free" intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.