IPW60R120C7XKSA1

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Infineon Technologies

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 120 MOHM; HIGHEST PERFORMANCE

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IPW60R120C7XKSA1

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Infineon Technologies

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 120 MOHM; HIGHEST PERFORMANCE

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Technical Specifications

Parameters and characteristics for this part

Specification	IPW60R120C7XKSA1

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	92 W
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	PG-TO247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPW60R120 Series

Part	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IPW60R120C7XKSA1	Through Hole	600 V	92 W	20 V	19 A	PG-TO247-3	N-Channel	120 mOhm	-55 °C	150 °C	1500 pF	10 V	MOSFET (Metal Oxide)	TO-247-3	34 nC	4 V
Infineon Technologies IPW60R120P7XKSA1	Through Hole	600 V	95 W	20 V	26 A	PG-TO247-3	N-Channel		-55 °C	150 °C	1544 pF	10 V	MOSFET (Metal Oxide)	TO-247-3	36 nC	4 V	120 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.38
		10	$ 3.59
		100	$ 2.57
		500	$ 2.14
		1000	$ 2.09

Description

General part information

IPW60R120 Series

The600V CoolMOS™C7 superjunction (SJ) MOSFETseries offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.

Documents

Technical documentation and resources