IPW60R120 Series

Catalog

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 120 MOHM; HIGHEST PERFORMANCE

Part	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IPW60R120C7XKSA1	Through Hole	600 V	92 W	20 V	19 A	PG-TO247-3	N-Channel	120 mOhm	-55 °C	150 °C	1500 pF	10 V	MOSFET (Metal Oxide)	TO-247-3	34 nC	4 V
Infineon Technologies IPW60R120P7XKSA1	Through Hole	600 V	95 W	20 V	26 A	PG-TO247-3	N-Channel		-55 °C	150 °C	1544 pF	10 V	MOSFET (Metal Oxide)	TO-247-3	36 nC	4 V	120 mOhm