SSM3K35MFV(TPL3)

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Toshiba Semiconductor and Storage

MOSFET N-CH 20V 180MA VESM

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Toshiba Semiconductor and Storage

MOSFET N-CH 20V 180MA VESM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K35MFV(TPL3)

Current - Continuous Drain (Id) @ 25°C	180 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	9.5 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-723
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	VESM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Operating Temperature	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs
Toshiba Semiconductor and Storage SSM3K35CT,L3F	MOSFET (Metal Oxide)	SC-101 SOT-883	3 Ohm	100 mW	1 V	CST3	Surface Mount	150 °C	10 V	180 mA	9.5 pF	4 V	1.2 V	20 V	N-Channel
Toshiba Semiconductor and Storage SSM3K35MFV(TPL3)	MOSFET (Metal Oxide)	SOT-723	3 Ohm		1 V	VESM	Surface Mount	150 °C	10 V	180 mA	9.5 pF	4 V	1.2 V	20 V	N-Channel	150 mW
Toshiba Semiconductor and Storage SSM3K35CTC,L3F	MOSFET (Metal Oxide)	SC-101 SOT-883	1.1 Ohm		1 V	CST3C	Surface Mount	150 °C	10 V	250 mA	36 pF			20 V	N-Channel	500 mW	1.2 V 4.5 V	0.34 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 180mA (Ta) 150mW (Ta) Surface Mount VESM

Technical documentation and resources