MOSFET N-CH 20V 180MA CST3
| Part | Technology | Package / Case | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Supplier Device Package | Mounting Type | Operating Temperature | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drain to Source Voltage (Vdss) | FET Type | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | SC-101 SOT-883 | 3 Ohm | 100 mW | 1 V | CST3 | Surface Mount | 150 °C | 10 V | 180 mA | 9.5 pF | 4 V | 1.2 V | 20 V | N-Channel | |||
Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | SOT-723 | 3 Ohm | 1 V | VESM | Surface Mount | 150 °C | 10 V | 180 mA | 9.5 pF | 4 V | 1.2 V | 20 V | N-Channel | 150 mW | |||
Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | SC-101 SOT-883 | 1.1 Ohm | 1 V | CST3C | Surface Mount | 150 °C | 10 V | 250 mA | 36 pF | 20 V | N-Channel | 500 mW | 1.2 V 4.5 V | 0.34 nC |