Specification	IRS2008MPBFAUMA1

Channel Type	Synchronous
Current - Peak Output (Sink)	600 mA
Current - Peak Output (Source)	290 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	30 ns
Gate Channel	N-Channel
Gate Type	IGBT, N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	200 V
Input Type	CMOS
Logic Voltage - VIH	2.5 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature (Max)	125 °C
Operating Temperature (Min)	-40 °C
Package / Case	14-VFQFN Exposed Pad
Package Length	4 mm
Package Name	14-MLPQ
Package Width	4 mm
Rise Time (Typ)	70 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IRS2008 Series

Part	Gate Type	Driven Configuration	Number of Drivers	High Side Voltage - Max (Bootstrap)	Package Name	Package Length	Package Width	Input Type	Logic Voltage - VIL	Logic Voltage - VIH	Package / Case	Mounting Type	Gate Channel	Current - Peak Output (Sink)	Current - Peak Output (Source)	Fall Time (Typ)	Rise Time (Typ)	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Operating Temperature (Max)	Operating Temperature (Min)	Channel Type
INFINEON IRS2008MPBFAUMA1	IGBT MOSFET N-Channel MOSFET	Half-Bridge	1	200 V	14-MLPQ	4 mm	4 mm	CMOS	0.8 V	2.5 V	14-VFQFN Exposed Pad	Surface Mount	N-Channel	600 mA	290 mA	30 ns	70 ns	10 VDC	20 V	125 °C	-40 °C	Synchronous
INFINEON IRS2008MTRPBFAUMA1	IGBT MOSFET N-Channel MOSFET	Half-Bridge	1	200 V	14-MLPQ	4 mm	4 mm	CMOS	0.8 V	2.5 V	14-VFQFN Exposed Pad	Surface Mount	N-Channel	600 mA	290 mA	30 ns	70 ns	10 VDC	20 V	125 °C	-40 °C	Synchronous
INFINEON IRS2008STRPBF	MOSFET N-Channel MOSFET	Half-Bridge	2	200 V	8-SOIC	0.154 in	3.9 mm	Non-Inverting	0.8 V	2.5 V		Surface Mount	N-Channel	600 mA	290 mA	30 ns	70 ns	10 VDC	20 V	150 °C	-40 °C	Synchronous

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