IRS2008 Series
Manufacturer: INFINEON
IC GATE DRVR HALF-BRIDGE 14MLPQ
| Part | Gate Type | Driven Configuration | Number of Drivers | High Side Voltage - Max (Bootstrap) | Package Name | Package Length | Package Width | Input Type | Logic Voltage - VIL | Logic Voltage - VIH | Package / Case | Mounting Type | Gate Channel | Current - Peak Output (Sink) | Current - Peak Output (Source) | Fall Time (Typ) | Rise Time (Typ) | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Operating Temperature (Max) | Operating Temperature (Min) | Channel Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | IGBT MOSFET N-Channel MOSFET | Half-Bridge | 1 | 200 V | 14-MLPQ | 4 mm | 4 mm | CMOS | 0.8 V | 2.5 V | 14-VFQFN Exposed Pad | Surface Mount | N-Channel | 600 mA | 290 mA | 30 ns | 70 ns | 10 VDC | 20 V | 125 °C | -40 °C | Synchronous |
INFINEON | IGBT MOSFET N-Channel MOSFET | Half-Bridge | 1 | 200 V | 14-MLPQ | 4 mm | 4 mm | CMOS | 0.8 V | 2.5 V | 14-VFQFN Exposed Pad | Surface Mount | N-Channel | 600 mA | 290 mA | 30 ns | 70 ns | 10 VDC | 20 V | 125 °C | -40 °C | Synchronous |
INFINEON | MOSFET N-Channel MOSFET | Half-Bridge | 2 | 200 V | 8-SOIC | 0.154 in | 3.9 mm | Non-Inverting | 0.8 V | 2.5 V | Surface Mount | N-Channel | 600 mA | 290 mA | 30 ns | 70 ns | 10 VDC | 20 V | 150 °C | -40 °C | Synchronous |