UPR10E3/TR7

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Microchip Technology

DIODE SWITCHING 100V 2.5A 2-PIN(1+TAB) POWER MITE T/R

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Microchip Technology

DIODE SWITCHING 100V 2.5A 2-PIN(1+TAB) POWER MITE T/R

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	UPR10E3/TR7	UPR10 Series

	-	-
Current - Reverse Leakage @ Vr	2 µA	2 µA
Mounting Type	Surface Mount	Surface Mount
Operating Temperature - Junction [Max]	150 °C	150 °C
Operating Temperature - Junction [Min]	-55 °C	-55 °C
Package / Case	DO-216AA	DO-216AA
Reverse Recovery Time (trr)	25 ns	25 ns
Speed	200 mA, 500 ns	200 - 500 mA
Supplier Device Package	DO-216	DO-216
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V	100 V
Voltage - Forward (Vf) (Max) @ If	975 mV	975 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DIODE GEN PURP 100V 2.5A DO216

Part	Technology	Speed	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Package / Case	Supplier Device Package	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Microchip Technology UPR10E3/TR13	Standard	200 mA, 500 ns	Surface Mount	975 mV	DO-216AA	DO-216	25 ns	100 V	2 µA	150 °C	-55 °C
Microchip Technology UPR10E3/TR7
Microchip Technology UPR10/TR13	Standard	200 mA, 500 ns	Surface Mount	975 mV	DO-216AA	DO-216	25 ns	100 V	2 µA	150 °C	-55 °C
Microchip Technology UPR10E3/TR7
Microchip Technology UPR10/TR7	Standard	200 mA, 500 ns	Surface Mount	975 mV	DO-216AA	DO-216	25 ns	100 V	2 µA	150 °C	-55 °C
Microchip Technology UPR10E3/TR7	Standard	200 mA, 500 ns	Surface Mount	975 mV	DO-216AA	DO-216	25 ns	100 V	2 µA	150 °C	-55 °C

General part information

Working Peak Reverse Voltage: 100V

Low thermal resistance DO-216 package for higher current operation

Ultrafast recovery time of 25 ns

Technical documentation and resources